Samsung SSD 860 Evo M.2 Sata

Minimum Order: 1

Available Stocks: 0

Weight: 1.00 kg/s

Dimension: 7.01 cm x 10.00 cm x 1.82 cm

₱ 6,407.00

No Reviews yet | Write a Review

Choose a Variation

Standard Delivery: No

Delivery Period: 3-5 days within Metro Manila and 5-7 days outside Metro Manila

(Note: Delivery period is dependent on Product Delivery)

Cash on Delivery not Available

Samsung SSD 860 Evo M.2 Sata

The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.


Enhanced Performance - Speeds are consistent, even under heavy workloads and multi-tasking allowing for 
faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent 
TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.

Boosted Endurance - Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications. The Samsung 860 EVO with V-NAND technology is backed by a 5-year limited warranty.*

Smart Compatibility- Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility.

Multiple Form Factors - Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.

Tech Specs:


SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

Sequential Read Speed

Up to 550 MB/s Sequential Read * Performance may vary based on system hardware & configuration

Random Write Speed

Random Write (4KB, QD32): Up to 90,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write 
* Performance may vary based on system hardware & configuration

Cache Memory

Samsung 512 MB Low Power DDR4 SDRAM

S.M.A.R.T. Support


Sequential Write Speed

Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration


Samsung MJX Controller

Trim Support


GC (Garbage Collection)

Auto Garbage Collection Algorithm

Internal Storage


Reliability (MTBF)

1.5 Million Hours Reliability (MTBF)

Random Read Speed

Random Read (4KB, QD32): Up to 98,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random Read 
* Performance may vary based on system hardware & configuration

NAND Flash

Samsung V-NAND 3bit MLC

AES Encryption

AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

WWN Support

World Wide Name supported