Samsung SSD 860 Evo Msata

Minimum Order: 1

Available Stocks: 0

Weight: 1.00 kg/s

Dimension: 7.01 cm x 10.00 cm x 1.82 cm


₱ 6,456.00

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Standard Delivery: No

Delivery Period: 3-5 days within Metro Manila and 5-7 days outside Metro Manila

(Note: Delivery period is dependent on Product Delivery)


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Samsung SSD 860 Evo Msata

The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed
to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable
SSD comes in a wide range of compatible form factors and capacities.


Features:

Enhanced Performance - Speeds are consistent, even under heavy workloads and multi-tasking allowing for 
faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent 
TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is 
upgraded from 12 GB to 78 GB.

Boosted Endurance - Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and 
rendering large sized 4K videos and 3D data used by the latest applications. The Samsung 860 EVO with 
V-NAND technology is backed by a 5-year limited warranty.*

Smart Compatibility- Benefit from faster, more fluid communication with your host system. The refined ECC* 
algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux 
compatibility.

Multiple Form Factors - Whatever size your computer needs, there is an 860 EVO for you. Choose among 
the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for 
ultra-slim computing devices.

Tech Specs:

Interface

SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

Sequential Read Speed

Up to 550 MB/s Sequential Read * Performance may vary based on system hardware & configuration

Random Write Speed

Random Write (4KB, QD32): Up to 90,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write 
* Performance may vary based on system hardware & configuration

Cache Memory

Samsung 512 MB Low Power DDR4 SDRAM

S.M.A.R.T. Support

Yes

Sequential Write Speed

Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration

Controller

Samsung MJX Controller

Trim Support

Yes

GC (Garbage Collection)

Auto Garbage Collection Algorithm

Internal Storage

Yes

Reliability (MTBF)

1.5 Million Hours Reliability (MTBF)

Random Read Speed

Random Read (4KB, QD32): Up to 98,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random Read 
* Performance may vary based on system hardware & configuration

NAND Flash

Samsung V-NAND 3bit MLC

AES Encryption

AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

WWN Support

World Wide Name supported